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本文对各种纯 Si C及含有少量杂质的 Si C在不同条件下的氧化行为进行了全面系统的概述。对今后 Si C氧化行为的研究具有一定的指导意义。
In this paper, all kinds of pure Si C and Si C with a small amount of impurities in a variety of conditions under the oxidation of a comprehensive overview. The research on Si C oxidation in the future is of guiding significance.