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化合物半导体较之 Si 具有许多良好的物理特性。Ⅲ—Ⅴ族半导体已在 LED 和激光二极管方面得到实际应用。做为未来集成电路元件材料,对于 GaAs 正在进行着积极的研究。最先是在 GaAs 中得到了红色发光。1968年首先在美国实现了 GaAsP 元化合物 LED 的实际应用。
Compound semiconductors have many good physical properties over Si. Group III-V semiconductors have been put to practical use in LEDs and laser diodes. As the future of integrated circuit component materials, GaAs is currently under active research. The first is the red glow in GaAs. In 1968, the practical application of GaAsP compound LED was first realized in the United States.