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在研究了MOSFET栅氧化层介质经时击穿物理机制的基础上 ,提出了氧化层击穿的逾渗模型 .认为氧化层的击穿是E′心和氧空位等深能级缺陷产生与积累 ,并最终形成电导逾渗通路的结果 .指出在电场作用下 ,氧化层中产生深能级缺陷 ,缺陷形成定域态 ,定域态的体积与外加电场有关 .随着应力时间的增长 ,氧化层中的缺陷浓度增大 ,定域态之间的距离缩小 .当定域态之间的距离缩小到一个阈值时 ,定域态之间通过相互交叠形成逾渗通路 ,形成扩展态能级 ,漏电流开始急剧增大 ,氧化层击穿 .
Based on the study of the physical mechanism of the breakdown of the gate oxide layer in the MOSFET, the percolation model of the oxide layer is proposed. The breakdown of the oxide layer is believed to be the generation and accumulation of deep level defects such as E ’and oxygen vacancies , And finally formed the result of conductivity percolation.It is pointed out that under the action of electric field, deep level defects are generated in the oxide layer and the defects form localized states, and the volume of localized states is related to the applied electric field.With the increase of stress time, the oxidation When the distance between localized states shrinks to a threshold value, the localization states overlap with each other to form percolation paths, forming an extended state energy level , Leakage current began to increase dramatically, the oxide breakdown.