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A new SOI LDMOS structure with buried n-islands(BNIs) on the top interface of the buried oxide(BOX) is presented in a p-SOI high voltage integrated circuits(p-SOI HVICs),which exhibits good self-isolation performance between the power device and low-voltage control circuits.Furthermore,both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm,but also modulate the lateral electric field distribution,resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS.A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.
A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Both further, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V / μm, but also modulate the lateral electric field distribution , resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presented an excellent self-isolation performance in a p-SOI HVIC.