Simulations of sputtering yield of Ti and Zr under energetic particle bombardments at room temperature (300 K)have been done by using a Fortran code TMNUCSP dev
In our previous work~[1],we have studied photoluminescence(PL)from 5.0×10~(17) C-ions/cm~2 doped SiO_2 films after 335 and 855 MeV~(40)Ar or 1.98 GeV~(84)K
For shortening irradiation treatment time and avoiding hot and cold points in target volume, it is verynecessary to enlarge the sharp Bragg peak of heavy ion be
<正>Two kinds of movement mode are used for the beam diagnostic probe drive, one is driven by the compressed air and another is driven by the stepping motor. Th