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针对反射式GaN光电阴极长波段量子效率衰减较大,短波段量子效率衰减较小的实验现象,在考虑谷间散射的情况下,利用玻尔兹曼分布和基于Airy函数的传递矩阵法,计算了发射电子能量分布,分析了表面势垒变化对量子效率衰减的影响,理论与实验符合较好.激活层有效偶极子数的减少使表面势垒宽度和高度增加,引起长波光子激发产生的发射电子能量分布衰减较大,短波光子激发产生的发射电子能量分布衰减较小,这是量子效率在长波段衰减较大,短波段衰减较小的根本原因.
Considering the large attenuation of the quantum efficiency in the long wavelength band of the reflective GaN photocathode and the small attenuation of the quantum efficiency in the short wavelength band, the Boltzmann distribution and the transfer matrix method based on the Airy function are used to calculate The energy distribution of the emitted electrons was analyzed and the effect of the change of surface potential barrier on the decay of quantum efficiency was analyzed, which is in good agreement with the experiment.The decrease of the number of effective dipoles in the active layer increases the width and height of the surface potential barrier, resulting in long-wave photon excitation The energy distribution of the emitted electrons is greatly attenuated, and the energy distribution of the emitted electrons generated by the short-wavelength photon excitation is attenuated less. This is the fundamental reason that the quantum efficiency decays greatly in the long wavelength band and the attenuation in the short wavelength band is small.