随着集成电路的发展,各种低温外延的方法应运而生.其中,分子束外延需要超高真空.且生长速率低;离子束外廷容易产生晶格缺陷,且同时有溅射作用.使晶体生长速率也很低;光束、X 射线或电子束辐射激励晶体生长的方法和机理都尚未成熟.而PECVD 外延结合了上述方法的优点(即给生长粒子流以能量)和PECVD 的特点,较其它低温外延的方法有如下长处:1.电场加速了生长表面上的原子迁移运动,因而外延生长的速度较快.2.衬底表面和生长面可同时进行清洗.3.不必要求高真空,而且残余气影响减小 With the development of integrated circuits, various methods of low-temperature epitaxy have emerged, in which the molecular beam epitaxy requires ultra-high vacuum and the growth rate is low; the ion implantation is prone to lattice defects and sputtering at the same time Crystal growth rate is also very low; the methods and mechanisms of beam growth, X-ray or electron beam radiation to stimulate crystal growth are not yet mature, while PECVD epitaxy combines the advantages of the above method (namely, the energy of growing particle flow) and PECVD Other methods of low-temperature epitaxy have the following advantages: 1. The electric field accelerates the movement of atoms on the growth surface, and thus the epitaxial growth speed is faster. 2. The substrate surface and the growth surface can be washed at the same time 3. Without the requirement of high vacuum, And the effect of residual gas decreases