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采用射频磁控溅射方法在单晶硅基底表面制备了单一相纳米结构二氧化钒(VO_2)薄膜,相变幅度超过2个量级;利用快速热处理设备对VO_2薄膜进行热处理,研究氮气氛下快速热处理温度对VO_2相变特性的影响。通过X射线衍射仪、扫描电子显微镜、高精度透射电子显微镜和四探针测试仪对热处理前后薄膜的结晶结构、表面形貌和电学相变特性分别进行了测试。实验结果表明,快速热处理状态下,温度为300℃时,VO_2薄膜的电阻相变幅度由200倍增加到277倍,但是当温度超过350℃后,相变性能迅速变差,相变幅度由2个量级下降为小于1个量级,当温度超过500℃时,相变特性消失;热处理温度升高的过程中,单斜VO_2(011)结晶结构逐渐消失,薄膜的成分转变为V4O7;快速热处理过程中薄膜内的颗粒尺寸保持不变。研究结果将有助于增强对VO_2薄膜在温度差异大、变化速度快环境中的特性进行分析与应用。
A single-phase nanostructured vanadium dioxide (VO_2) thin film was prepared by RF magnetron sputtering on the surface of monocrystalline silicon substrate. The phase transformation amplitude was over 2 orders of magnitude. The VO_2 thin film was heat-treated by rapid thermal annealing equipment. Effect of Rapid Heat Treatment Temperature on VO2 Phase Transitions. The crystal structure, surface morphology and electrical phase transition of the films before and after heat treatment were tested by X-ray diffraction, scanning electron microscopy, high-precision transmission electron microscopy and four-probe tester respectively. The experimental results show that the resistance phase change of VO_2 thin film increases from 200 times to 277 times when the temperature is 300 ℃ at 300 ℃, but the phase change property rapidly deteriorates when the temperature exceeds 350 ℃, When the temperature is over 500 ℃, the phase transformation property disappears. The crystal structure of monoclinic VO_2 (011) gradually disappears and the composition of the film changes to V4O7 during the process of the heat treatment. The size of the particles in the film remained unchanged during the heat treatment. The results of the study will help to enhance the analysis and application of the properties of VO_2 thin films in environments with large temperature differences and rapid changes.