论文部分内容阅读
在真空半导体产业中,等离子体增强化学气相沉积腔室内热流场耦合的参数控制是生产工艺过程决定产品质量的关键因素。通过变结构腔室内温度和压力耦合测量试验验证,得到正确可行的针对变结构腔室三维模型热流场耦合计算的仿真算法。对比试验结果,依次改变腔室入口流量、出口压力以及承载台温度的大小,分析计算腔室内温度和压力的耦合分布特性。变结构腔室中热流场耦合分布规律,为真空腔室结构设计及参数控制提供理论依据。
In the vacuum semiconductor industry, the parameter control of the coupled heat flow field in the plasma enhanced chemical vapor deposition chamber is the key factor that determines the product quality in the production process. Through the coupling test of temperature and pressure in the variable structure chamber, a correct and feasible simulation algorithm for the coupled calculation of the heat flow field in a three-dimensional model of a variable structure chamber is obtained. Comparing the experimental results, the inlet flow rate, outlet pressure and the temperature of the stage were changed in sequence, and the coupling and distribution characteristics of temperature and pressure in the chamber were analyzed and calculated. The coupling rule of heat flow field in variable structure chamber provides theoretical basis for vacuum chamber structure design and parameter control.