据日本《电视学会志》1989年第1期报道,日本东芝公司在实验中首先发现双极晶体管具有双稳态特性,并根据这种现象研制成由两种器件构成的新概念SRAM.该公司着眼于减少构成SRAM的器件数,根据偏置条件(基极和收集极电压)使双极的基极电流反转,发现并确认所产生的双稳态特性.具体情况是:基极电压在0.5V以下和0.9V以上时,电流从基极向发射极流动,在0.5～0.9V范围内电流从收集极向基极反向流动.为了存贮信息,以前的SRAM单元由双稳态多谐振电路的6个元件(4个MOS晶体管 According to Japan’s “Institute of Television,” No. 1, 1989 reported that Japan’s Toshiba first discovered in the experiment bipolar transistor has a bistable characteristic, and in accordance with this phenomenon developed into a new concept SRAM composed of two devices. The company Focusing on reducing the number of devices that make up the SRAM, inverting the bipolar base current according to the bias conditions (base and collector voltage), the resulting bistable characteristics were found and confirmed, in particular: 0.5V or less and 0.9V or more, the current flows from the base to the emitter, and the current flows reversely from the collector to the base in the range of 0.5 to 0.9 V. In order to store the information, the previous SRAM cell has a bistable Six elements of resonant circuit (4 MOS transistors