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用射频共溅射的方法制备了不同金属含量φ的 Fe- Si O2 金属 -绝缘体颗粒膜 ,系统研究了薄膜的微结构、磁性以及隧道磁电阻 ( TMR)效应 .在φ=0 .33处得到最大磁电阻比 RTMR为- 3. 3% .在同样的制备条件下保持φ =0 . 33,用 Co 取代 Fe 得到一系列的( Fe10 0 -x Cox) 0 .33( Si O2 ) 0 .67的颗粒膜 .对其 TMR的研究发现在 x =53时得到最大的磁电阻比为 -4 .3% ,且 Co对 Fe的替代基本没有影响薄膜的微结构 .由 Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 .表明在 Fe Co- Si O2 膜中由于磁性颗粒自旋极化率 P的提高而使 RTMR 变大 .这也和基于第一原理的线性缀加平面波方法得到的理论计算结果一致 .
The microstructure and magnetic properties of the films and the tunneling magneto-resistance (TMR) effects were systematically investigated by radio-frequency co-sputtering of Fe-Si O2 metal-insulator granular films with different metal content.At φ = 0.33, The maximum magnetoresistance ratio RTMR is -3.3%, keeping φ = 0.33 under the same preparation conditions, substituting Co for Fe to obtain a series of (Fe10 0-x Cox) 0.33 (Si O2) 0.67 The results of TMR showed that the maximum magneto-resistivity ratio was -4.3% at x = 53, and the substitution of Co for Fe did not affect the microstructure of the films at all.According to Inoue’s The theoretical curve of the spin-polarizability P and the atomic percentage x of Co shows a similar tendency of change with the experimental RTMR-x curve, which shows that due to the spin-polarizability of the magnetic particles in the Fe Co-Si O2 film, The increase of P increases the RTMR, which is also consistent with the theoretical calculation of the linearly-added plane wave method based on the first principle.