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一般致密SiC材料的制备需要极高的温度,而降低制备温度一直是SiC制备领域的重要研究方向。采用流化床化学气相沉积法,在球形二氧化锆陶瓷颗粒上制备了厚度为几十微米的SiC包覆层。通过对不同温度SiC包覆层的显微形貌及微观结构变化规律研究,给出了沉积效率变化规律,发现低温产物富硅,而高温产物富碳。对不同氩气含量的实验研究发现,氩气的加入可以促进沉积反应向富碳方向移动,从而可以在显著降低温度的条件下制备出致密SiC包覆层。综合实验结果给出了流化床化学气相沉积方法在不同温度及氩气浓度条件下制备SiC的物相分布图。
The preparation of general compact SiC materials requires extremely high temperatures, and lowering the preparation temperature has always been an important research direction in the field of SiC preparation. The fluidized bed chemical vapor deposition method was used to prepare a SiC coating with a thickness of several tens of microns on the spherical zirconium dioxide ceramic particles. Through the study on the microstructure and microstructure of SiC coating at different temperatures, the variation law of deposition efficiency is given. It is found that the products with low temperature are silicon-rich and the products with high temperature are carbon-rich. Experiments on different argon contents show that the addition of argon can promote the deposition reaction to move toward the carbon-rich direction, so that the dense SiC coating can be prepared under the condition of significantly reducing the temperature. The experimental results show the phase distribution of SiC prepared by fluidized bed chemical vapor deposition at different temperatures and argon concentrations.