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针对RF MEMS开关释放时间过长的问题,提出了一种电压控制方法有效地缩短了开关的释放时间,提高了开关的速度。这种方法无需修改器件设计,仅需要调整偏置电压变化形式,用线性压降替代传统的阶跃压降,就能有效抑制MEMS梁在释放过程中的振动。给出了这种方法的相关理论、等效模型及仿真结果。由ANSYS仿真结果可知,在标准大气压下,采用28μs单段线性压降后,梁的释放时间从103μs缩短到62.5μs;采用26μs双段线性压降后,梁的释放时间进一步缩短到26μs,仅为原来的1/4,即开关速度约为原来的4倍。
Aiming at the problem that the release time of RF MEMS switch is too long, a voltage control method is proposed to shorten the switch release time and improve the switching speed. This method does not need to modify the device design, only need to adjust the bias voltage changes, linear pressure drop to replace the traditional step-pressure drop, can effectively inhibit the MEMS beam in the release process of vibration. Relevant theories, equivalent models and simulation results of this method are given. From the ANSYS simulation results, the beam release time is shortened from 103μs to 62.5μs at 28μs linear pressure drop at standard atmospheric pressure. With a 26μs two-stage linear pressure drop, the beam release time is further reduced to 26μs, and only For the original 1/4, the switching speed of about 4 times the original.