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通过引入SiO2氧化物缓冲层,在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO2薄膜.详细研究了SiO2厚度对VO2薄膜的晶体结构、微观形貌和绝缘体—金属相变(MIT)性能的影响.结果表明厚度0.2μm以上的SiO2缓冲层能够有效消除VO2薄膜与金属薄膜之间的巨大应力,制备出具有明显相变特性的VO2薄膜.当缓冲层达到0.7μm以上,获得的薄膜具有明显的(011)晶面择优取向,表面平整致密,相变前后电阻率变化达到3个数量级以上.基于该技术制备了Pt-SiO2/VO2-Au三明治结构,通过在垂直膜面方向施加很小的驱动电压,观察到明显的阶梯电流跳跃,证实实现了电致绝缘体—金属相变过程.该薄膜制备工艺简单,性能稳定,器件结构灵活可应用于集成式电控功能器件.
By introducing SiO2 oxide buffer layer, high quality VO2 thin films were successfully fabricated on metal Pt electrodes by RF magnetron sputtering.The crystal structure, morphology and insulator-metal phase transition of VO2 thin films were studied in detail. (MIT) .The results show that SiO2 buffer layer with a thickness of more than 0.2μm can effectively eliminate the huge stress between the VO2 thin film and the metal thin film, and the VO2 thin film with obvious phase transition characteristics is prepared.When the buffer layer reaches 0.7μm or more, The obtained films have obvious preferential orientation of (011) plane and the surface is even and dense, and the resistivity changes more than three orders of magnitude before and after the phase transformation.The Pt-SiO2 / VO2-Au sandwich structure was prepared based on this technique, A small driving voltage was applied and a significant step current jump was observed, confirming the realization of the electrical insulator-metal phase transition process. The preparation process of the thin film is simple, the performance is stable, and the device structure is flexible and can be applied to an integrated electronic control functional device.