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日本电气公司武藏野电气通信实验室最近报导了溅射SiO_2膜的剥离作图方法,他们用这种方法成功地作成了具有斜侧壁的SiO_2图形,与过去用的湿法化学腐蚀和圆筒形等离子体腐蚀方法相比,没有侧向腐蚀而产生的钻蚀,图形精度高。该实验分以下几个步骤(见图):(a)使用一般光刻法在Si衬底上形成正性抗蚀剂(AZ-135)图形,在140℃下进行后烘,这些图形为微米厚,并有60°斜侧壁。(b)用平面rf磁控管溅射装置,在衬底上淀积SiO_2膜。(c)用缓冲氢氟酸轻微腐蚀(30℃,30s),除去淀积
NIPPON Musashino Electric Telecommunications Laboratory recently reported the stripping patterning of sputtered SiO 2 films by using this method to successfully create SiO 2 patterns with slanted sidewalls that are similar to those used in the past for wet chemical etching and cylindrical Compared with the plasma etching method, there is no undercut erosion and the pattern erosion is high. The experiment was divided into the following steps (see the figure): (a) A positive resist (AZ-135) pattern was formed on a Si substrate using a general photolithography process and post-baked at 140 ° C. These were micron Thick, with 60 ° oblique sidewalls. (b) A planar rf magnetron sputtering apparatus was used to deposit a SiO 2 film on the substrate. (c) Gently etch (30 ° C, 30s) with buffered hydrofluoric acid to remove the deposits