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本文报导了用常压ＭＯＣＶＤ技术在ＧａＡｓ衬底上生长ＧａＳｂ、ＧａＡｓＳｂ、ＡｌＧａＳｂ和ＡｌＧａＡｓＳｂ异质外延材料的实验结果。研究了生长条件和材料质量的相互关系，优化了生长参数。首次采用组分缓变过渡层和超晶格结构来解决品格失配问题，利用ＳＥＭ和光学显微镜、Ｘ射线衍射仪、电子探针等测量、分析了外延层结构与组分、表面与断面形貌及其电学性质。测得ＧａＳｂ６／ＧａＡｓ结构中非有掺杂ＧａＳｂ层的Ｘ射线双晶摆曲线半峰小于１５０孤秒，霍尔迁移率μ＿ｐ（３００ｋ）＞６２０ｃｍ￣２／Ｖ·８，载流子浓度小于１×１０￣１６ｃｍ￣（－３），接近同质外延水平．
This paper reports the experimental results of GaSb, GaAsSb, AlGaSb and AlGaAsSb heteroepitaxy grown on GaAs substrate by atmospheric MOCVD. The relationship between growth conditions and material quality was studied and the growth parameters were optimized. The component misclassification transition layer and the superlattice structure were adopted for the first time to solve the mismatch of character. The structure and composition of the epitaxial layer, surface and cross section were analyzed by SEM and optical microscope, X-ray diffraction and electron probe. Appearance and its electrical properties. The half-width of the X-ray doublets with non-doped GaSb layer in GaSb6 / GaAs structure is less than 150 ns and the Hall mobility μ_p (300k)> 620cm~2 / V · 8 and the carrier concentration is less than 1 × 10 ~ 16cm ~ (-3), close to the level of homogenous epitaxial.