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用时间分辨反射率技术实时测量了Si+、As+注入单晶硅的固相外延生长速率和外延层厚度,并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理,分析了实验结果.
The solid-phase epitaxial growth rate and epitaxial layer thickness of Si +, As + single crystal silicon were measured by real-time reflectance technique in real time and compared with the thickness of amorphous layer measured by backscattering channel method. Introduced the measuring principle, analyzed the experimental result.