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用中子激活方法,对气态P_2O_5在SiO_2-Si系统中的扩散分布进行了直接测量。样品为p型Si单晶,电阻率为3—5欧姆·厘米,氧化层是在1250℃下水汽中生长的,其厚度为0.45—0.47微米。实验结果表明:对于完全掩蔽的样品,磷在SiO_2层中的浓度分布有个陡峭的边界;对于掩蔽失效情形,在靠近SiO_2-Si交界面约0.1微米的SiO_2层内,磷的浓度显著地降低,出现一个明显的交界层,在交界层以外的SiO_2层中磷的浓度是均匀的和恒定的,而交界层中磷的浓度及磷在Si中的表面浓度都随时间的延长而显著地升高,文中对所得的结果作了简单讨论。
The neutron activation method was used to directly measure the diffusion distribution of gaseous P 2 O 5 in SiO 2 -Si system. The sample was a p-type Si single crystal with a resistivity of 3-5 ohm-cm and an oxide layer grown in water vapor at 1250 ° C with a thickness of 0.45-0.47 μm. The experimental results show that there is a steep boundary for the concentration distribution of phosphorus in the SiO 2 layer for completely masked samples; for the case of masking failure, the concentration of phosphorus decreases significantly in the SiO 2 layer close to the SiO 2-Si interface of about 0.1 μm , An obvious interface layer appears. The concentration of phosphorus in the SiO 2 layer outside the boundary layer is uniform and constant. However, the phosphorus concentration in the interface layer and the surface concentration of phosphorus in Si increase significantly with time High, the article made a brief discussion of the results obtained.