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利用脉冲激光法制备了ZnO :Al透明导电膜 .通过对膜进行霍尔系数测量及SEM、XRD测试分析 ,详细研究了靶材中的化学配比 (掺杂比 )对膜的透射比和电阻率的影响 .结果表明 :掺杂比、氧分压强影响着膜的电学、光学性能和膜的结晶状况 .从电学分析看出 :掺杂比从 0 .75 %增至 1.5 %过程中 ,膜的载流子浓度、透射比 (在波长大于 5 0 0nm的范围 )和光隙能相应增大 .在氧分压强为 0Pa、掺杂比为 1.5 %左右时沉积的膜 ,其电阻率达到最小 ,其值为 7.1× 10 -4 Ω·cm ,且在可见光区其透射比超过了 90 % .
The transparent conductive film of ZnO: Al was prepared by pulsed laser method.The transmittance and the resistance of the film were investigated in detail by measuring the Hall coefficient and analyzing the SEM and XRD results. The results show that the doping ratio and the partial pressure of oxygen affect the electrical and optical properties of the film and the crystallization of the film.The electrical analysis shows that when the doping ratio increases from 0.75% to 1.5% The carrier concentration and the transmittance (in the wavelength range of more than 500nm) and the corresponding increase of the optical gap energy.When the oxygen partial pressure is 0Pa and the doping ratio is about 1.5%, the resistivity of the deposited film is the smallest, It has a value of 7.1 × 10 -4 Ω · cm and a transmittance of more than 90% in the visible region.