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对TC4进行以氨气为气源的离子氮化,氮化温度700℃,750℃,850℃,900℃,保温时间4小时.通过金相检验、显微硬度测定、X射线衍射结构分析,研究了离子氮化温度等参数对渗层深度、硬度和结构的影响规律.
温度对TC4离子氮化组织和性能的影响
【摘 要】
：
对TC4进行以氨气为气源的离子氮化,氮化温度700℃,750℃,850℃,900℃,保温时间4小时.通过金相检验、显微硬度测定、X射线衍射结构分析,研究了离子氮化温度等参数对渗层深度、
【出 处】
：
光学精密工程
【发表日期】
：
2004年期
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