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本文用实验证实了氮化硅敏感膜表面存在OH~-羟基和NH_2氨基团.指出了氢离子FET传感器不稳定的主要原因:敏感膜表面和溶液中羟基团的活跃性;被测溶液OH~-羟基因及其pH值随时间而变化,敏感膜固/液两相界面势的变化.还证实了氢离子敏FET传感器长期不稳定性与氮化硅敏感膜沉积工艺有关.通过调整或控制敏感膜表面或界面上羟基和氨基因及其比率,可以解决氢离子敏FET的长期稳定性.
In this paper, the experiments confirmed that there are OH ~ - hydroxyl and NH_2 groups on the surface of silicon nitride sensitive membrane.The main reasons for the instability of hydrogen ion FET sensor are: the activity of hydroxyl groups on the surface of sensitive membrane and in solution; - Hydroxyl and its pH value changes with time, the sensitive membrane solid / liquid two-phase interface potential changes also confirmed the long-term instability of hydrogen ion-sensitive FET sensors and silicon nitride sensitive film deposition process by adjusting or controlling Sensitive membrane surface or interface hydroxyl and ammonia gene and its ratio, can solve the long-term stability of hydrogen ion sensitive FET.