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1995年微细加工技术年会于2月19—24日在美国电子工业研究中心——硅谷的Sar-ta Crala举行。会议讨论的热点是0.2～0.3微米范围的远亚微米技术,为规模生产256兆以上的DRAM创造条件。电子束、X光束、超紫外、离子束亚微米加工技术分会讨论了电子束在硅片上直接光刻工艺,提高光刻精度的方法,相移掩膜制造工艺,软X射线曝光设备,掩膜制造工艺,关键元,部件制造工艺技术,以及离子束直接光刻和无掩膜工艺等技术。
The 1995 Microfabrication Annual Meeting was held February 19-24 at Sar-ta Crala, Silicon Valley, at the Center for Electronics Industry Research. The meeting discussed the hot spot is the 0.2 ~ 0.3 micron range of sub-micron technology, to create the conditions for the scale of 256 megabytes of DRAM. Electron Beams, X-Beams, Ultra-Ultraviolet Beams, Sub-micron Sub-micron Processing Technology Session discusses the direct electron beam lithography process on silicon wafers, methods to improve lithography accuracy, phase shift mask manufacturing process, soft X-ray exposure equipment, Film manufacturing process, key element, component manufacturing process technology, and ion beam direct lithography and maskless technology.