DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户：xuming

【摘要】

：

Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of ga

【出处】

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Journal of Electronics(China)

【发表日期】

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2002年1期

【关键词】

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锗硅合金 PMOSFET 最佳匹配设计制造 SiGe Alloy PMOSFET Optimization

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Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of

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DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

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