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以SnC l4.5H2O和NH4F为原料,用喷涂热分解法在石英玻璃上制备SnO2.F薄膜。采用X光电子能谱分析仪(XPS)和X光衍射仪(XRD)分别表征SnO2.F薄膜的成分和晶体结构,研究了F-的掺杂量和热处理对薄膜方块电阻、可见光区透射率和红外光区反射率的影响。实验结果表明,用本次实验的配方,衬底温度TS大致450℃,喷涂时间为15s时,薄膜的方块电阻R□为0.2~4kΩ/□,可见光透过率达T≈80%和红外光反射率R≈80%以上。样品在O2及N2气氛中进行一定温度范围的退火处理后,其电阻率上升。
Using SnC14.5H2O and NH4F as raw materials, SnO2.F thin films were prepared on quartz glass by spray pyrolysis. The composition and crystal structure of SnO2.F thin films were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD) respectively. The influence of F- content and heat treatment on the sheet resistance, visible light transmittance Infrared light reflectance. The experimental results show that the sheet resistance R □ of the film is 0.2 ~ 4kΩ / □, the visible light transmittance reaches T≈80% and the infrared light can be obtained by the formula of this experiment when the substrate temperature TS is about 450 ℃ and the spraying time is 15s. Reflectance R ≈ 80% or more. After the samples were annealed in a certain temperature range in O2 and N2 atmosphere, the resistivity of the samples increased.