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本文介绍调Q激光束扫描(包括绿光和红外光两种,及随后的热处理对硅器件电学性能的影响。研究结果表明,在一定的功率范围内,激光束扫描可以改变晶体管电流放大系数β而不影响其击穿电压和反向漏电I_(bco)和I_(eco),也不损害二氧化硅钝化层。结果还表明,在一定的结深范围内,激光束扫描会影响P~+N结二极管的反向漏电I_r。激光产生的效应在400℃退火后是稳定的,而在800℃退火后却几乎完全消除。MOS C-t寿命测量的结果证实该效应是由于表面和附近体内少子寿命的下降所引起的。最后讨论了激光扫描在半导体工艺中的可能应用。
In this paper, we introduce the effects of Q-switched laser beam scanning (including green light and infrared light, and subsequent heat treatment on the electrical performance of silicon devices.) The results show that laser beam scanning can change the transistor current amplification factor β within a certain power range Without affecting its breakdown voltage and Ic (bco) and I_ (eco), nor damaging the SiO2 passivation layer.The results also show that laser beam scanning affects P ~ + N Junction diode reverse leakage I_r The effect of laser generation is stable after annealing at 400 ° C but almost completely after annealing at 800 ° C The results of the MOS Ct lifetime measurement confirm that this effect is due to the effect of the surface and nearby bodies Life expectancy caused by the decline.Finally discussed the possible application of laser scanning in semiconductor technology.