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较强功率的激光辐照半导体探测器时既产生光电效应又产生热效应 ,提出了反映光电效应的载流子输运模型和反映热效应的热扩散模型。计算了不同激光辐照功率密度下PC型HgCdTe探测器内的光生载流子浓度和热平衡载流子浓度 ,由此对探测器的瞬变行为进行了仿真计算 ,仿真结果与实验结果相吻合
The laser with high power irradiates the semiconductor detector with both the photoelectric effect and the thermal effect. The carrier transport model reflecting the photoelectric effect and the thermal diffusion model reflecting the thermal effect are proposed. The photo-carrier concentration and the thermal equilibrium carrier concentration in the PC-type HgCdTe detector were calculated under different laser power densities. The transient behavior of the detector was simulated and the simulation results were in good agreement with the experimental results