关于硅材料制备过程中碳沾污的问题,近年来引起了人们极大的关注.我们在研究Sicl_4氢还原低压硅外延生长时发现,外延层的碳沾污要比常压外延生长严重.不解决这个问题,将影响低压硅外延生长技术的正常使用和推广.为此,我们对SiCl_4氢还原低压硅外延生长过程中碳沾污的问题进行了研究. In the recent years, great attention has been paid to the problem of carbon contamination during the preparation of silicon materials.We found that the carbon contamination of the epitaxial layer is more serious than the normal-pressure epitaxial growth in the study of the Si-4 hydrogen reduction and low-pressure silicon epitaxial growth. To solve this problem, it will affect the normal use and promotion of low-voltage silicon epitaxial growth technology.To this end, we studied the carbon contamination of SiCl4 hydrogen reduction low-pressure silicon epitaxial growth process.