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本文首次研究金属Ｃｏ与分子束外延Ｓｉ１－ｘＧｅｘ单晶薄膜快速热退火（ＲＴＡ）固相反应，并对比了ＣＯ、Ｔｉ与ＳｉＧｅ固相反应时不同的反应规律实验采用ＲＢＳ、ＡＥＳ、ＸＲＤ、ＳＥＭ等分析和测试手段对样品的组分和结构等薄膜特性进行检测．实验发现，Ｃｏ／Ｓｉ０．８Ｇｅ０，２在６５０℃热退火后形成组分为Ｃｏ（Ｓｉ０，９Ｇｅ０．１）的立方晶系结构，薄膜具有强烈择优取向；９００℃处理温度，有ＣｏＳｉ２形成，同时Ｇｅ明显地向表面分凝．ＴｉＮ／Ｔｉ／Ｓｉ０．８Ｇｅ０．２固相反应时，８５０℃处理可以形成Ｔｉ（Ｓｉ１－ｙＧｅｙ）；三元结构，并以（００４）晶面为择优取向。薄膜均匀平整，电阻率达到ＴＩＳｉ２最低值范围，高温处理未发生组分分凝．从生成物的晶体结构和形成热差异上对实验结果进行了分析．
In this paper, the RTA solid state reactions of metallic Co and molecular beam epitaxy Si1-xGex single crystal thin films are studied for the first time. Different reaction rules of the solid state reaction between CO, Ti and SiGe are compared using RBS, AES, XRD and SEM Such as analysis and testing methods of the sample composition and structure of the film properties such as testing. It was found that the Co / Si 0.8 Ge 0 2 formed a cubic structure with Co (Si 0.9 Ge 0.1) after thermal annealing at 650 ℃ and had a strong preferential orientation. CoSi 2 formed at 900 ℃, Ge apparently to the surface of the condensate. TiN / Ti / Si0.8Ge0.2 solid-state reaction, the processing can be formed at 850 ℃ Ti (Si1-yGey); ternary structure, and the (004) crystal plane as the preferred orientation. The film is even and flat, the resistivity reaches the lowest range of TISi2, and no component segregation occurs in the high temperature treatment. The experimental results were analyzed from the crystal structure and thermal differences of the products.