论文部分内容阅读
钒的氧化物具有对温度敏感的半导体-金属可逆相变特性。在多种钒氧化合物中,VO2的相变温度点约为68℃,适用于很多应用领域。VO2长期暴露在空气中时,会被氧化。研究了通过制备VO2/Al2O3复合膜系来保持氧化钒薄膜的稳定性的方法。采用TFCalc薄膜设计软件,设计了VO2/Al2O3复合膜系。依据材料的折射率和消光系数,优化了膜系各膜层的厚度,分析了复合膜系的相变特性。采用磁控溅射方式制备了氧化钒薄膜,再通过氧氩混合气氛热处理得到VO2占主要成分的氧化钒薄膜。在氧化钒薄膜上采用射频磁控溅射方法封装了120nm厚的Al2O3膜。利用分光光度计测量分析了膜系的相变特性,Al2O3膜对VO2膜的相变性能影响很小。Al2O3膜适于VO2薄膜的封装。
Vanadium oxides have temperature-sensitive semiconductor-metal reversible phase transitions. In a variety of vanadium oxides, VO2 phase transition temperature of about 68 ℃, suitable for many applications. VO2 will be oxidized when it is exposed to the air for a long time. A method of maintaining the stability of a vanadium oxide film by preparing a VO2 / Al2O3 composite film system was studied. Using TFCalc film design software, designed VO2 / Al2O3 composite film system. Based on the refractive index and extinction coefficient of the material, the thickness of each film was optimized and the phase transition characteristics of the composite film were analyzed. The vanadium oxide film was prepared by magnetron sputtering and then the vanadium oxide film with VO2 as the main component was obtained by heat treatment in a mixed atmosphere of oxygen and argon. On the vanadium oxide film using radio frequency magnetron sputtering method encapsulated 120nm thick Al2O3 film. The phase transition characteristics of the films were measured by spectrophotometer. The influence of Al2O3 films on the phase transition properties of VO2 films was insignificant. Al2O3 film suitable for VO2 film packaging.