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测量了３种不同生长方法（加速坩埚旋转布里奇曼法、固态再结晶法和改进的布里奇曼生长大直径晶体法）制备的长波红外蹄镉汞晶体（块晶）载流子寿命的温度变化关系，与窄禁带半导体载流子复合机构的理论计算结果比较表明，优质晶体中是以带间碰撞复合为主。
Long-wave infrared foot-and-groove cadmium-mercury crystal (bulk crystal) carrier lifetime was measured by three different growth methods (accelerated Bridgman method of crucible rotation, solid state recrystallization and modified Bridgman growth large diameter crystal) Compared with the theoretical calculation results of the narrow bandgap semiconductor carrier recombination mechanism, it is shown that the high-quality crystal is mainly composed of inter-band collision.