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对ｐ－ＩｎＧａＡｓ的Ａｕ／Ｐｔ／Ｔｉ欧姆接触提供了一种新的制造技术，即在淀积金属之前采用阳极氧化和低能Ａｒ~＋离子溅射腐蚀。从ＲＴＰ之后提供的具有极好均匀性和一致性的低电阻率接触看出，这种清洗工艺优于湿法化学预清洗。
Au / Pt / Ti ohmic contact of p-InGaAs provides a novel manufacturing technique that employs anodization and low-energy Ar + ion sputter etching prior to deposition of the metal. From the low resistivity contacts with excellent uniformity and consistency provided after RTP, this cleaning process is superior to wet chemical pre-cleaning.