研究了硅衬底上电子束蒸发铝膜 ,在 H2 SO4 水溶液中阳极氧化形成硅衬底多孔氧化铝复合结构的过程 .硅衬底电子束蒸发铝膜的阳极氧化过程主要由多孔氧化铝的生长、氧化铝生长向氧化硅生长的过渡和氧化硅生长三个阶段构成 .硅衬底多孔氧化铝复合结构的透射电子显微镜观察表明 ,在硅衬底上形成了垂直于硅表面的氧化铝纳米孔 ,而孔底可形成 Si O2 层 .有序结构多孔氧化铝的形成不依赖于铝膜的结晶状态 ,而是由阳极氧化过程的自组织作用所决定的 .实验表明将多孔氧化铝制备工艺移植到硅基衬底上直接形成硅基衬底多孔氧化铝复合结构是可行的 ,它也为硅基纳米材料的制备提供了一种新的自组织模板 The process of electron beam evaporation of aluminum film on silicon substrate and anodic oxidation in H2SO4 aqueous solution to form the porous aluminum oxide composite structure of silicon substrate was studied.The anodic oxidation process of silicon substrate electron beam evaporation aluminum film is mainly composed of porous alumina , The transition from alumina growth to silicon oxide growth and the growth of silicon oxide.Transmission electron microscopy (TEM) observation of the porous alumina composite structure of silicon substrate shows that the alumina nano-pores perpendicular to the silicon surface are formed on the silicon substrate , While the bottom of the hole can form Si O2 layer.Ordered structure of porous alumina formation does not depend on the crystalline state of the aluminum film, but by the anodic oxidation process of self-organization determined by the experiments show that porous alumina preparation process transplantation It is feasible to directly form a porous silicon oxide composite structure on a silicon substrate. It also provides a new self-organized template for the preparation of silicon-based nanomaterials