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设计了新颖的具有垂直结构的6H-SiC光导开关。首先采用离子注入工艺在半绝缘6H-SiC衬底两侧生成一层p+离子注入层,然后利用外延工艺在其中的一侧生长一层n+外延层,并将此侧定义为开关的阴极。利用二维半导体器件仿真软件,研究了n+外延层厚度对6H-SiC光导开关特性的影响。结果表明,增加外延层厚度可以提高开关的击穿电压;而开关的导通电流,首先随着n+外延层厚度的增加而减小,在n+外延层厚度为5μm达到最小值,随后随着厚度的增加,导通电流增加。
A novel 6H-SiC photoconductive switch with vertical structure was designed. First, a layer of p + ion implantation layer is formed on both sides of the semi-insulating 6H-SiC substrate by using an ion implantation process, and then an n + epitaxial layer is grown on one side by an epitaxial process, and this side is defined as the cathode of the switch. The influence of the thickness of n + epitaxial layer on the characteristics of 6H-SiC photoconductive switch was studied by using two-dimensional semiconductor device simulation software. The results show that increasing the thickness of the epitaxial layer can increase the breakdown voltage of the switch. On-state current of the switch decreases firstly with the increase of the n + epitaxial layer thickness, reaches the minimum value at 5μm, and then decreases with the thickness Increase, turn-on current increases.