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目的:比较半导体激光治疗和传统牙周治疗对种植体周围黏膜炎的临床治疗差异。方法:选择种植体周围黏膜炎患者20例,以基础治疗后1周为基线。随机分为两组,实验组应用刮治器刮治+半导体激光(Ga Al As)治疗,激光能量设定为970 nm,功率为1瓦特,脉冲模式;对照组应用刮治器刮治,均辅助派力奥(盐酸米诺环素软膏)进行牙周塞治。探诊测量基线和治疗后1个月、3个月改良菌斑指数(modification plaque index,m PLI),探诊深度(probing depth,PD),改良龈沟出血指数(modified sulcus bleeding index,m SBI)。结果:治疗后1个月和3个月,两组m PLI,PD,m SBI与基线比较均有明显下降(P<0.05),但两组间疗效差异无统计学意义。结论:半导体激光(Ga Al As)治疗种植体周围粘膜炎安全有效。
OBJECTIVE: To compare the clinical effects of semi-conductor laser treatment and traditional periodontal treatment on peri-implant mucositis. Methods: Twenty patients with mucositis around the implant were selected. One week after basic treatment was taken as the baseline. The experimental group was randomly divided into two groups. The experimental group was treated with GaAl As treatment. The laser energy was set at 970 nm and the power was 1 watt. The control group was treated with scraping device Assisted Palio (minocycline hydrochloride ointment) for periodontal treatment. At the baseline and at 1 month and 3 months after treatment, modified plaque index (m PLI), probing depth (PD), modified sulcus bleeding index (m SBI ). Results: At 1 month and 3 months after treatment, m PLI, PD and m SBI in both groups decreased significantly compared with baseline (P <0.05), but there was no significant difference in efficacy between the two groups. Conclusion: GaAl As is safe and effective in the treatment of mucositis around implants.