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设计并优化了一种用808nm的大功率激光二极管为抽运光源,In0.09Ga0.91As量子阱结构为增益介质的920nm光抽运半导体垂直外腔面发射激光器。运用有限元方法,对激光器的电特性方程和光特性方程求自洽解,计算了器件各种特性参量。分析了单个周期内不同阱的个数(1,2和3)、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下,器件性能的改变,特别是模式、阈值和光-光转换效率的改变,从而选择一个最佳的结构。
A 920nm optical pumping vertical-cavity external emitting semiconductor laser with a 808nm high-power laser diode as the pumping light source and an In0.09Ga0.91As quantum well structure as the gain medium was designed and optimized. Using the finite element method, the self-consistent solution to the equation of the electrical characteristic and the optical characteristic of the laser is obtained, and the various characteristic parameters of the device are calculated. The changes of the device performance in different wells (1, 2 and 3), different well depths, different base widths, different non-absorber layer components and different non-absorber layer sizes in a single cycle are analyzed, especially the mode, Threshold and light - light conversion efficiency changes, so as to select the best structure.