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对未掺杂的、重磷掺杂的和重硼掺杂的多晶硅膜在812℃,7.5atm的高压水汽中的氧化特性进行了研究.为了比较,同时给出了(111)-Si 和(100)-Si的氧化结果.对未掺杂多晶硅,氧化特性和常压湿氧情况下类似,但标志初始迅速氧化阶段的时间t_1变短.对重磷掺杂多晶硅膜,加速氧化是很明显的.它能得到一个较大的x_(pod)/x_(SOM)厚度比率.对重硼掺杂多晶硅,在高压和常压下氧化速率都比(111)-Si快,但加速氧化的现象小得多.
Oxidation behavior of undoped, heavily phosphorus doped and heavily boron doped polysilicon films in high pressure water vapor at 812 ° C, 7.5 atm For the purpose of comparison both (111) -Si and ( 100) -Si oxidation results. For undoped polycrystalline silicon, the oxidation behavior is similar to that under atmospheric pressure, but the initial rapid oxidation stage t_1 is shortened. For the heavily doped polycrystalline silicon film, the accelerated oxidation is obvious .It can get a larger ratio of x_ (pod) / x_ (SOM) thickness. For heavily boron doped polycrystalline silicon, the oxidation rate is faster than (111) -Si at both high pressure and atmospheric pressure, but accelerates the oxidation phenomenon Much smaller.