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利用超声喷雾热分解(USP)技术,采用N-Al共掺法,在eagle2000衬底上制备出了电学特性较好的p型Zn0.93Mg0.07O薄膜:电阻率为18.43Ω.cm、迁移率是0.362 cm2/(V.s)、载流子浓度为1.24×1018cm-3。系统分析了前驱溶液中Al掺杂量或Mg掺杂量变化时对p型Zn1-xMgxO薄膜电学特性和结构特性的影响。紫外可见光透射测试表明:Zn1-xMgxO薄膜在紫外-可见光范围内的透过率达到了80%。
The p-type Zn0.93Mg0.07O thin films with good electrical properties were prepared on the eagle2000 substrate by ultrasonic spray pyrolysis (USP) technique and N-Al co-doped method. The resistivity was 18.43Ω.cm, the mobility Is 0.362 cm2 / (Vs), and the carrier concentration is 1.24 x 1018 cm-3. The influence of Al doping amount or Mg doping amount in precursor solution on the electrical and structural characteristics of p-type Zn1-xMgxO films was systematically analyzed. UV-visible transmission test showed that the transmittance of Zn1-xMgxO film reaches 80% in the UV-Vis range.