直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。本文分析了引起直拉单晶炉生长过程中炉膛内真空度不稳定的因素,通过改进单晶炉真空系统和充气系统,确保硅单晶在生长过程中单晶炉炉膛内的真空度保持高度稳定,有助于提高硅单晶生长的质量。 Czochralski furnace growth in the furnace during the high degree of vacuum stability of the normal growth of silicon single crystal plays a very important role. In this paper, the factors that cause the instability of the vacuum in the furnace during the growth of Czochralski (Czochralski) single crystal furnace are analyzed. The vacuum in the single crystal furnace is kept high by improving the vacuum system and the inflating system Stable, helps to improve the quality of silicon single crystal growth.