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本文介绍了具有单片集成透镜的InGaAsP/InP双异质结(DH)发光管(LED)的制作和设计。这种器件具有高速和高辐射性能。分析了诸如耦合功率、电-光线性度、截止频率等工作特性与LED、光纤结构参数的依从关系,提出了模型,并用于完成最佳设计。现已发现高倍数的透镜能使耦合输出功率和响应速度同时达到最大值。在1.15、1.3、1.5μm波长下做出了与50μm芯径0.2NA梯度折射率光纤相耦合的LED。尤其在截止频率方面得到了明显改善,在1.3μm波长耦合功率(35μW)没有减小的情况下,工作电流100mA的截止频率最大值已达到120MHz。这种二极管的高速大功率性能对高比特率传输系统的应用是很有前途的。
This article describes the fabrication and design of an InGaAsP / InP double heterostructure (DH) LED with a monolithic integrated lens. This device has high speed and high radiation performance. The dependence of operating characteristics such as coupling power, electro-optic linearity and cut-off frequency on LED and fiber structure parameters was analyzed. The model was proposed and used to complete the optimal design. It has now been found that high magnification lenses maximize both the output power and the response speed of the coupling. LEDs with a 50 μm core diameter 0.2 NA gradient index fiber were made at 1.15, 1.3, 1.5 μm wavelength. In particular, the cutoff frequency has been significantly improved at a wavelength of 1.3μm coupling power (35μW) did not decrease the case, the operating current 100mA maximum cutoff frequency has reached 120MHz. The high speed and high power performance of this diode is promising for high bit rate transmission systems.