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目前采用薄膜沉积工艺或把薄片焊接到基片上并研磨到所需的厚度,便制成了一种高于100兆周工作的压电换能器,在任何情况下都不能只单独地考虑到换能器,而还应考虑到它的中问介质层和寄生电路元件,以评述它的特性。本文采用Mason等效电路从损耗和导纳测量这些条件下正确评价换能器的特性。并示出了计算曲线,从这些曲线中可以看到机械阻抗和耦合系数实际应用的重要性,列出了在熔融石英基片上的ZnO薄膜和LiNbO_3薄片换能器的试验数据,以论证应用等效电路所描述的耦合系数。
The current use of thin film deposition processes or the soldering of wafers to substrates and grinding to the desired thickness creates a piezoelectric transducer that operates above 100 trillion cycles without taking into account solely Transducer, but also should consider its medium and parasitic circuit elements to comment on its characteristics. In this paper, the Mason equivalent circuit is used to correctly evaluate the transducer characteristics under these conditions of loss and admittance measurement. And shows the calculated curves. From these curves, we can see the importance of practical application of mechanical impedance and coupling coefficient. The experimental data of ZnO thin film and LiNbO3 thin-plate transducer on fused silica substrate are listed to demonstrate the application and so on Efficiency of the circuit described by the coupling coefficient.