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用常压化学气相淀积法在(100)Si衬底上异质外延生长了3CSiC薄膜。为减小3CSiC与硅之间的晶格失配,在化学气相淀积系统中通过对硅衬底表面碳化制备了缓冲层,确定了形成缓冲层的最佳条件。用X射线衍射、俄歇电子能谱、扫描电镜对薄膜的特性进行了分析。测量结果表明,1300℃下在Si衬底缓冲层上可以获得3CSiC单晶。
3CSiC films were heteroepitaxially grown on (100) Si substrates by atmospheric pressure chemical vapor deposition. In order to reduce the lattice mismatch between 3CSiC and silicon, a buffer layer was prepared by carbonizing the surface of a silicon substrate in a chemical vapor deposition system, and the optimum conditions for forming a buffer layer were determined. The properties of the films were analyzed by X-ray diffraction, Auger electron spectroscopy and scanning electron microscopy. The measurement results show that 3CSiC single crystal can be obtained on the Si substrate buffer layer at 1300 ° C.