An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode array consists of five emitter stripes which share common electrodes on one laser chip.The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100ns pulse width.The laser diode array emits at the wavelength of 409nm,which is located in the blueviolet region,and the threshold current is 2.9A.The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8nm under the current of 25 A.