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在绝缘层上激光再结晶硅中制作结体管业已实现。用氮化硅抗反射窄条,使硅在激光扫描退火后的边缘变陡。抗反射窄条可以精确控制晶粒边界的位置。晶粒边界在标准的LOCOS工艺中氧化,生成了完全嵌入氧化物中的单晶硅窄条。在再结晶的材料中制备了n沟晶体管和环形振荡器。获得的晶体管中表面迁移率为650cm~2/V.sec,测得环形振荡器(L=5μm)中每级延迟时间为1毫微秒。
In the insulation layer of laser recrystallized silicon in the production of the junction tube industry has been achieved. With silicon nitride anti-reflective strips, the silicon in the laser scanning annealing the edge of steep. Anti-reflective strip can accurately control the location of grain boundaries. The grain boundaries are oxidized in a standard LOCOS process, creating a single-crystal narrow strip of silicon fully embedded in oxide. An n-channel transistor and a ring oscillator are prepared in a recrystallized material. The resulting transistor had a surface mobility of 650 cm2 / Vsec and a delay of 1 ns per stage in the ring oscillator (L = 5 [mu] m) was measured.