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为了满足静电感应晶体管(SIT)在中小功率高频领域的应用需求,基于SIT的工作原理以及中小功率高频应用对器件的性能要求,设计一款工作频率为600～800 MHz、通态电流I≈2 A、柵源击穿电压BVgso≈10 V、漏源击穿电压BVdso为100～120 V的常开型SIT。为了满足上述参数要求,设计了漂移区长度为4μm、有源区总厚度为10μm、单元周期为10μm的短漂移区SIT器件。通过数值模拟,研究了短漂移区SIT的电学特性,并与长漂移区SIT的电学特性做了比较和讨论。结果表明,短漂移区SIT具有通态电阻小、功耗小、线性度好、频率高的优点,在中小功率高频领域具有应用意义。
In order to meet the application requirements of SIT in small and medium-power high-frequency fields, based on the working principle of SIT and the performance requirements of small and medium-power high-frequency applications, a design working frequency of 600 ~ 800 MHz, on-state current I≈ 2 A, gate breakdown voltage BVgso ≈ 10 V, drain-source breakdown voltage BVdso is 100 ~ 120 V of the normally open SIT. In order to meet the requirements of the above parameters, a short drift region SIT device with a drift region length of 4 μm, a total active region thickness of 10 μm and a cell period of 10 μm was designed. Through the numerical simulation, the electrical characteristics of SIT in short drift region are studied and compared with the electrical characteristics of SIT in long drift region. The results show that the short drift region SIT has the advantages of small on-state resistance, low power consumption, good linearity and high frequency, and has the application significance in the field of small and medium power high frequency.