为了降低SiC的制造成本,美国北卡罗莱纳州立大学的研究人员设计了一种PRESiCE制程,并搭配TIX-Fab实现低成本的SiC功率MOSFET。碳化硅(SiC),这种宽能隙的半导体元件可用于打造更优质的电晶体,取代当今的硅功率晶体管,并与二极管共同搭配,提供最低温度、最高频率的功率元件。SiC晶体管所产生的热也比硅功率晶体管更低30%,然而,它的成本至今仍然比硅更高5倍。 To reduce SiC manufacturing costs, researchers at North Carolina State University in the US have designed a PRESiCE process and implemented a low-cost SiC power MOSFET with TIX-Fab. Silicon carbide (SiC), a wide bandgap semiconductor device that can be used to create better transistors, replace today’s silicon power transistors and work with diodes to provide the lowest temperature and highest frequency power components. SiC transistors also generate 30% less heat than silicon power transistors, yet its cost is still up to five times higher than silicon today.