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对表面光电压谱及其瞬态特性应用于研究界面态及其动力学性质作了详细的讨论.在界面态在带隙内的分布是连续的情况,得到费米能级上的电子(或空穴)的俘获截面以及光电离截面,并且可得到带隙内界面态分布的轮廓.利用这方法研究了厚度只有10A左右的硅衬底上自然氧化的氧化膜界面,结果表明它的界面态分布和动力学参数与厚氧化膜界面均有所不同.这对了解界面态的演变提供了有意义的参考.
The surface photovoltage spectra and their transient properties are discussed in detail for the study of the interface states and their dynamical properties. The distribution of the interface states in the bandgap is continuous, resulting in an electron at the Fermi level Hole) and the photoionization cross-section, and the profile of the interface state in the band gap can be obtained.With this method, the natural oxidation of the oxide film interface on the silicon substrate with a thickness of about 10A is studied, and the results show that its interface state distribution And kinetic parameters are different from the thick oxide film interface, which provides a meaningful reference for understanding the evolution of interface states.