论文部分内容阅读
本文用射频磁控溅射方法在p-Si83Ge17/Si压应变衬底上沉积制备HfO2栅介质薄膜,研究其后退火处理前后的电学性能,并与相同条件沉积在无应变p-Si衬底上HfO2薄膜的电学性能进行对比研究.物性测试分析结果表明,沉积HfO2薄膜为单斜相(m-HfO2)多晶薄膜,薄膜介电常数的频率依赖性较小,1 MHz时薄膜介电常数约为23.8.在相同的优化制备条件下,沉积在Si83Ge17/Si衬底上的HfO2薄膜电学性能明显优于沉积在Si衬底上的薄膜样品:薄膜累积态电容增加;平带电压VFB骤减至0.06 V;电容-电压滞后回线明显减小;1 V栅电压下漏电流密度J减小至2.51×10 5A cm 2.实验对比结果表明Si83Ge17应变层能有效地抑制HfO2与Si之间的界面反应,改善HfO2/Si界面性质,从而提高薄膜的电学性能.
In this paper, a thin film of HfO2 gate dielectric was deposited on a p-Si83Ge17 / Si substrate by radio-frequency magnetron sputtering. The electrical properties before and after annealing were studied. The same conditions were deposited on unstrained p-Si substrate HfO2 thin films.Physical analysis shows that the deposited HfO2 thin films are monoclinic (m-HfO2) polycrystalline thin films, the frequency dependence of the dielectric constant of the thin films is small, the dielectric constant of the thin films is about Is 23.8. The HfO2 thin films deposited on the Si83Ge17 / Si substrate show better electrical properties than the thin films deposited on the Si substrate under the same optimized fabrication conditions: the cumulative state capacitance of the thin film increases; the flatband voltage VFB decreases sharply to 0.06 V; the hysteresis loop of capacitance-voltage decreases obviously; the leakage current J decreases to 2.51 × 10 5A cm at 1 V gate voltage. The experimental results show that Si83Ge17 strain layer can effectively suppress the interface between HfO2 and Si Reaction, improve the HfO2 / Si interface properties, thereby enhancing the electrical properties of the film.