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采用射频溅射法制备了纳米“铁磁金属-半导体基体”Fe-In2O3颗粒膜,研究了Fex（In2O3）1-x颗粒膜样品的磁性和巨磁电阻效应.实验结果表明:当Fe体积百分比为35％时,颗粒膜样品的室温磁电阻变化率△ρ/ρ0数值达到 4.5％.Fe0.35（In2O3）0.65颗粒膜样品的磁电阻变化率△ρ/ρ0随温度（T=1.5～300 K）的变化关系表明:当温度低于10 K时,△ρ/ρ0数值随温度的下降而迅速增大,在温度T=2 K时△ρ/ρ0达到85％.通过研究颗粒膜低场磁化率X（T）温度关系和不同温度下的磁滞回线,证实当温度降低到临界温度 Tp=10 K时,颗粒膜中结构变化导致磁化状态发生“铁磁态-类自旋玻璃态”转变.Fe0.35（In2O3）0.65颗粒膜样品的磁电阻变化率△ρ/ρ0在温度低于10K时的迅速增大,可能是由于纳米“铁磁金属-半导体基体”Fe0.35（In2O3）0.65颗粒膜样品处于“类自旋玻璃态” 时存在特殊的导电机制所造成的.
The Fe-In2O3 nano-scale ferromagnetic metal-semiconductor matrix was prepared by radio frequency sputtering and the magnetic and GMR effects of Fex (In2O3) 1-x granular film were investigated. The experimental results show that when the volume fraction of Fe Is 35%, the rate of change of magnetoresistance △ ρ / ρ0 at room temperature reaches 4.5% at room temperature.The change rate of magnetoresistance △ ρ / ρ0 with the temperature of the sample of Fe0.35 (In2O3) K) shows that when the temperature is lower than 10 K, the value of △ ρ / ρ0 rapidly increases with the decrease of temperature, and △ ρ / ρ0 reaches 85% at the temperature of T = The relationship between the magnetic susceptibility X (T) and the hysteresis loop at different temperatures confirms that when the temperature decreases to the critical temperature Tp = 10 K, the structural changes in the granular film lead to the magnetization state “ferromagnetic state-like spin-like glassy state ”The change rate of magnetic resistance △ ρ / ρ0 of the Fe0.35 (In2O3) 0.65 granular film samples at a temperature lower than 10K may be due to the increase of Fe0.35 (In2O3 ) 0.65 Granular film samples in the “spin-like glass-like state,” there is a special conductive mechanism caused by .