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本文报道对氢化非晶硅 ( a-Si∶H)薄膜在 6 0 0～ 6 2 0℃温度下快速退火 1 0 s可以形成纳米晶硅 ( nc-Si) ,其 Raman散射表明 ,在所形成的 nc-Si在薄膜中的分布是随机的 ,直径在 1 .6～ 1 5nm范围内 ,并且在强激光辐照下观察了 nc-Si在薄膜中的结晶和生长情况 .经退火所形成的 nc-Si可见光辐射较弱 ,不能检测到它们的光致发光 ( PL) ,但用氢氟酸腐蚀钝化后则可检测到较强的红 PL,并且钝化后的 nc-Si在空气中暴露一定的时间后 ,其辐射光波长产生了蓝移 .文中就表面钝化和量子限制对可见光辐射的重要性作了讨论 .
In this paper, we report that nanocrystalline silicon (nc-Si) can be formed by rapid annealing of hydrogenated amorphous silicon (a-Si: H) thin films at 600-600 ℃ for 10 s. The distribution of nc-Si in the film is random and the diameter is in the range of 1.6-6.5 nm. The crystallization and growth of nc-Si in the film were observed under intense laser irradiation. nc-Si visible radiation is weak, can not detect their photoluminescence (PL), but with hydrofluoric acid corrosion passivation can be detected after a strong red PL, and the passivation of nc-Si in the air After exposure for a certain period of time, the wavelength of the radiated light is blue-shifted. The importance of surface passivation and quantum confinement for visible radiation is discussed.