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研究了应变Si沟道引入对薄膜全耗尽SOI MOSFET器件特性的影响,并分析了器件特性改进的物理机理。与传统的SOI MOSFET结构相比,器件的驱动电流和峰值跨导都有明显提高,对n-FET分别为21%和16.3%,对p-FET为14.3%和10%。应变Si沟道的引入还降低了器件的阈值电压,这有益于集成电路中供电电压的降低和电路功耗的减小。另外,本文还对新结构中的Ge含量进行了优化分析,认为当Ge含量为30%时,器件有较好的电特性,而且不会增加器件制作的工艺成本。
The effect of strained Si channel on the characteristics of the fully depleted SOI MOSFETs was investigated. The physical mechanism of device characteristics improvement was also analyzed. Compared with the traditional SOI MOSFET structure, the driving current and peak transconductance of the device are significantly improved, respectively 21% and 16.3% for the n-FET, 14.3% and 10% for the p-FET. The introduction of the strained Si channel also reduces the threshold voltage of the device, which is beneficial for the reduction of the supply voltage and the reduction of the circuit power consumption in the integrated circuit. In addition, the Ge content in the new structure is optimized and analyzed. It is concluded that the device has good electrical characteristics when the content of Ge is 30%, and does not increase the process cost of device fabrication.